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  2. Showing results for 4h sic pin traps
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  3. Studies of 4h si pin traps
     
  4. Springer
    https://link.springer.com › article

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power ...

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  5. Springer
    https://link.springer.com › content › pdf
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    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN

  6. Images of 4H Sic PiN traps

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  7. Wiley Online Library
    https://onlinelibrary.wiley.com › doi › full

    Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted …

  8. Springer
    https://link.springer.com › article

    Carrier lifetime modulation on current capability of SiC PiN diodes …

  9. Archive ouverte HAL
    https://hal.science › file › SiC PiN diode ISSMD.pdf
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    1Department of Electrical Engineering, IIT Dharwad, India, …

  10. ResearchGate
    https://www.researchgate.net › publication

    (PDF) Electron Radiation Effects on the 4H-SiC PiN Diodes ...

  11. People also ask
    What are the electrically active traps in 4h-silicon carbide (4H-SiC) pin power diodes?
    The electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes are identified by deep-level transient Fourier spectroscopy (DLTFS).

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power

    link.springer.com
    Do deep-level traps reduce the minority carrier lifetime of 4H-SiC PIN diode?
    Accordingly, the deep-level traps such as E2 at EC − 0.67 eV, H3 at E V + 0.63 eV, and T6 at 0.68 eV may play a crucial role in reducing the minority carrier lifetime of the 4H-SiC PiN diode. Hence, the forward current density is anticipated to decrease (on-state voltage drop and conduction loss increase) due to the trapping effect.

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power

    link.springer.com
    What is a 4H-SiC pin power diode?
    The electrical and trap characterization studies are carried out for the 4H-SiC PiN power diodes. The ideality factor of 1.6 and the series resistance of 1.2 Ω of the diode are extracted from the forward I – V at 25 °C.

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power

    link.springer.com
    What is tscap spectroscopy of 4H-SiC PIN diode?
    The TSCAP spectroscopy of 4H-SiC PiN diode measured at the reverse bias VR = − 10 V (trap filling at 40 K by reducing the reverse bias to -0.1 to populate the majority carrier traps)

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power

    link.springer.com
    Which spectroscopy measurements are carried out In 4H-SiC PIN diodes?
    The current-mode DLTFS (I-DLTFS) and thermally stimulated capacitance (TSCAP) spectroscopy measurements are also carried out to acquire further information about the traps in the 4H-SiC PiN diodes.

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power

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    What is 4H polytype silicon carbide (4H-SiC) power device?
    In the modern society, there is a strong demand for semiconductor chips, and the 4H polytype silicon carbide (4H-SiC) power device is a promising candidate for the next generation semiconductor chip, which can be used in various power electronic systems.

    An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with three

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  12. ResearchGate
    https://www.researchgate.net › figure

    a Forward I–V characteristics of the 4H-SiC PiN diode …

    The electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes are identified by deep-level transient Fourier spectroscopy (DLTFS).

  13. IOPscience
    https://iopscience.iop.org › article

    Electrical characterization of near-interface traps in thermally ...

  14. Archive ouverte HAL
    https://hal.science › document
    [PDF]

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN …

  15. arXiv.org
    https://arxiv.org › html

    NIMA POST-PROCESS BANNER TO BE REMOVED AFTER …

  16. Institution of Engineering and Technology
    https://ietresearch.onlinelibrary.wiley.com …

    Displacement damage and total ionisation dose …

    Oct 29, 2019 · A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by …

  17. 大阪電気通信大学
    https://www.osakac.ac.jp › labs › matsuura › PDF › Dcts
    [PDF]

    Characterization of traps in semi-insulating 4H-SiC

  18. Springer
    https://link.springer.com › article

    An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with …

  19. AIP Publishing
    https://pubs.aip.org › aip › jap › article

    Fabrication of 4H-SiC PiN diodes without bipolar degradation by ...

  20. ResearchGate
    https://www.researchgate.net › figure

    C-V curves of the 4H-SiC PiN diodes (a) and the extracted carrier ...

  21. IEEE Xplore
    https://ieeexplore.ieee.org › document

    Low Interface Trap Density 4H-SiC MIS Structure With SiO

  22. IEEE Xplore
    https://ieeexplore.ieee.org › document

    Electron Radiation Effects on the 4H-SiC PiN Diodes …

  23. OUCI
    https://ouci.dntb.gov.ua › en › works

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power …

  24. Semantic Scholar
    https://www.semanticscholar.org › paper

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power ...

  25. ScienceDirect
    https://www.sciencedirect.com › science › article › pii

    Characterization of deep electron traps in 4H-SiC Junction Barrier ...

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