4h sic laser annealing

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ScienceDirect
https://www.sciencedirect.com/science/article/pii/S2589152919303242
Ni/4H-SiC interaction and silicide formation under excimer laser ...
Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and reaction of the involved atomic species. With this intent, the deposited nickel lay… See more
1. Introduction
Silicon carbide (SiC) is today one of the most suitable materials for the fabrication of low ON … See more
ScienceDirect
2. Experimental setup
SBD devices have been fabricated on 150 mm-diameter (6 inches) 4H-SiC wafers following the procedure given in [3]. The backside contact has been made on highly doped n-ty… See more
ScienceDirect
3. Results and discussion
The sheet resistance of the as deposited Ni layer and of laser annealed samples as a function of the energy density has been measured by a Four Point Probe (FPP). This param… See more
ScienceDirect
4. Conclusion
The formation of a Ni-based ohmic contact on 4H-SiC has been activated by laser annealing using UV irradiation from a 308 nm wavelength excimer laser with pulse duration of … See more
ScienceDirect
Acknowledgments
The authors would like to thank M. Fabiano and M. Arena of CTM Physics Lab (STMicroelectronics, Catania) for SEM analyses, M. Barbagallo, M. Sciacca, E. Marcellino, … See more
ScienceDirect
Can laser annealing produce ohmic contact on thinned 4H-SiC substrates?
The goal of this work is to investigate, through simulations, the formation of an ohmic contact by laser annealing to fabricate Junction Barrier Schottky (JBS) diodes on thinned 4H-SiC substrates. To do so, the first step is to estimate the temperature at the interface M/SiC, for different laser fluences.
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Table of Contents
1. Introduction
2. Experimental setup
3. Results and discussion
4. Conclusion
Acknowledgments
Can laser annealing produce ohmic contact on thinned 4H-SiC substrates?

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Studies of 4h sic laser annealing
ScienceDirect
Original Article Formation mechanism, interface characteristics and the application of metal/SiC thin-film ohmic contact after high-temperature treatment
SiC, as a representative of the third generation semiconductors, is widely investigated in power devices and sensors. However, ohmic contacts, an important component for signal output of various SiC chips, have always faced challenges with unclear formation mechanism and difficulty to withstand high...
Published: 2023/05/01
Cited By: 0
Keywords: Silicon carb…
ResearchGate
Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
Based on the finite elements method, thermal simulations were conducted to reproduce a laser annealing of several metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to find out the best conditions to achieve ohmic contact formation through laser annealing....
Published: 2019/07/04
DOI: 10.4028/www.scie…
ResearchGate
Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
The formation of ohmic contacts by laser annealing approach is of great importance for SiC power devices, since it allows their fabrication on thin substrates, that is of crucial significance to reduce power dissipation. Ni silicide reaction under UV laser irradiation has been studied in detail with...
Author: Paolo Badalà, …
Published: 2023/06/06
DOI: 10.4028/p-z365f5
ScienceDirect
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A multimethod approach based on Transmission Electron Microscopy, Energ...
Published: 2021/02/15
Cited By: 0
Keywords: XRD; TEM…
ResearchGate
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and reaction of the involved atomic species. With this intent, the deposited nickel layer thickness was scaled from 100 nm to 10 nm and the laser fluence was spanned from 2.2 to ...
Author: Paolo Badalà, …
Published: 2019/11/01
DOI: 10.1016/j.mtla.201…
ResearchGate
The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing
The preparation of ohmic contact with high stability and low resistance is critical, and the quality of ohmic contact will directly affect the performance of devices as the efficiency, gain and switching speed. In this work, the I-V characteristic of the 4H-SiC devices under rapid thermal annealing ...
Author: Zi Wei Zhou, Z…
Published: 2020/07/01
DOI: 10.4028/www.scie…
ScienceDirect
In situ annealing of hydroxyapatite thin films
Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to p...
Published: 2006/09/01
Cited By: 0
Keywords: Hydroxyap…
MDPI
https://www.mdpi.com/2073-4352/13/7/1106
Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed …
Jul 16, 2023 · Laser processing parameters are directly affecting the contact resistivity of the metal/SiC system during laser annealing. The commonly used laser annealing process device …
Tags:
Laser Annealing
Ohmic contact
Sic Laser
Metal fabrication
ScienceDirect
https://www.sciencedirect.com/science/article/pii/S223878542300580X
Formation mechanism, interface characteristics and the …
May 1, 2023 · Through annealing and high-temperature aging tests, Ni is easier to form ohmic contact with N-type 4H–SiC than Ti, but due to the lack of a barrier layer, the Ni combination …
Tags:
Ohmic contact
Annealing
ResearchGate
https://www.researchgate.net/publication/334225234...
Laser Annealing Simulations of Metallisations Deposited on 4H-SiC
Jul 3, 2019 · Based on the finite elements method, thermal simulations were conducted to reproduce a laser annealing of several metals deposited on 4H-SiC. We estimated the …
Tags:
Laser Annealing Semiconductor
Simulated Annealing Temperature
ResearchGate
https://www.researchgate.net/publication/…
(PDF) Ni-Silicide Ohmic Contacts on 4H-SiC Formed …
Jun 6, 2023 · Solid-state laser annealing process, with wavelength in green light region, can indeed represent a suitable solution for ohmic contact formation of 4H-SiC power devices, fabricated on thin...
Tags:
Laser Annealing
Ohmic contact
Excimer laser
Scientific.Net
https://www.scientific.net/MSF.1062.219.pdf
[PDF]
Optimisation of Ti Ohmic Contacts Formed by Laser …
This work is focused on the fabrication of Titanium-based ohmic contacts by Laser Thermal Annealing (LTA) on n-type silicon carbide (4H-SiC). Their morphologies and electrical …
Tags:
Laser Annealing
Ohmic contact
AIP Publishing
https://pubs.aip.org/tu/npe/article/4/1/0…
Characteristics of Ni-based ohmic contacts on n-type …
Mar 15, 2021 · The ohmic contact resistance of 4H-SiC samples is measured using a transmission-line-model structure. The nickel–silicon compound phase in both pulsed laser annealing (PLA) and rapid thermal annealing (RTA) samples …
Tags:
Laser Annealing
Ohmic contact
Moon River
Nature
https://www.nature.com/articles/ncomms13562
Laser-induced phase separation of silicon carbide - Nature
Nov 30, 2016 · Here we demonstrate the melt-mediated phase separation and surface reconstruction of single-crystal 4H-SiC by irradiation of a xenon chloride (XeCl) excimer laser …
Tags:
Sic Laser
Excimer laser
Keon Jae Lee
Laser Melting Binary Compound
ResearchGate
https://www.researchgate.net/profile/Jean-Francois...
[PDF]
Laser Annealing Simulations of Metallisations Deposited on …
A triple frequency YAG pulsed laser (355 nm) was reproduced to simulate the annealing of metals used to obtain ohmic contacts on SiC n-type 100 μm thick 4H-SiC substrates with a nitrogen...
Tags:
Laser Annealing
Sic Laser
Scientific.Net
https://www.scientific.net/MSF.1062.417.pdf
[PDF]
Structural and Electrical Characterization of Ni-Based Ohmic …
Laser annealing process for ohmic contact formation on 4H-SiC has attracted increasing attention in the last years, because it enables the fabrication of SiC power devices on very thin substrates.
Tags:
Laser Annealing
Ohmic contact
Sic Laser
ScienceDirect
https://www.sciencedirect.com/science/article/pii/S0169433220329755
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under ...
Feb 15, 2021 · In Brief: Structural, morphological and compositional changes in Ni/4H-SiC after UV-laser annealing. Increasing the laser fluence moves the Ni-Si reaction front towards the …
Tags:
Laser Annealing
Publish Year:2021
4h Sic Melting Point
Sic Under Laser
scientific.net
https://www.scientific.net/SSP.344.15.pdf
[PDF]
Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse …
Among the alternative processes to RTA proposed for Si [5-8], laser annealing is the most promising one for ohmic contact formation on 4H-SiC [9-15].
nature.com
https://www.nature.com/articles/s41566-019-0556-6
4H-silicon-carbide-on-insulator for integrated quantum and …
Dec 2, 2019 · Rapid progress in on-demand, site-controlled single defect generation in 4H-SiC, using a variety of techniques including proton beam writing 16, masked ion implantation 17 and laser...
Springer
https://link.springer.com/article/10.1007/s11664-021-09263-2
Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC
Oct 18, 2021 · Pulsed laser annealing (PLA, 527 nm, 200-ns pulse, Nd:YLF laser) was used to activate phosphorous-implanted C-face SiC and repair lattice damage. The electrical and …
Tags:
Laser Annealing
Sic Laser
Publish Year:2021
Moon River
SAGE Journals
https://journals.sagepub.com/doi/full/10.1177/25165984241290356
Influence of irradiation wavelength during laser-assisted doping of …
Oct 30, 2024 · Laser-assisted doping of silicon carbide (SiC) substrates is challenging due to the low diffusion coefficient of dopant atoms and the chemically inert nature of SiC. Single crystal …
Tags:
Sic Laser
Chowtapalli
MDPI
https://www.mdpi.com/1996-1944/12/20/3362
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
Oct 15, 2019 · This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. …
Tags:
Laser Annealing
4-H
Publish Year:2019
ACS Publications
https://pubs.acs.org/doi/10.1021/acsnano.4c10978
Controlled Spalling of 4H Silicon Carbide with Investigated Spin ...
Oct 29, 2024 · We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC’s …
Tags:
ACS Nano
Spin
Scientific.Net
https://www.scientific.net/MSF.1004.705
4H-SiC MOSFET Source and Body Laser Annealing Process
This work describes the development of a new post-implant crystal recovery technique in 4H-SiC using XeCl (l=308 nm) multiple laser pulses in the ns regime.
Tags:
Laser Annealing
Publish Year:2020
ResearchGate
https://www.researchgate.net/publication/337219791...
Ni/4H-SiC interaction and silicide formation under excimer laser ...
Nov 1, 2019 · Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and reaction of the involved atomic species.
Tags:
Laser Annealing
Ohmic contact
Excimer laser
Taylor & Francis Online
https://www.tandfonline.com/doi/full/10.1080/17452759.2024.2416518
Full article: Stress-relief annealing friendly Fe-based metallic …
3 days ago · 1. Introduction. Laser powder-bed fused (L-PBF) is an advanced additive manufacturing (AM) technology that offers efficient and rapid production of complex high …
Tags:
Annealing
Laser
LinkedIn
https://www.linkedin.com/in/berk-kovos-5740a529
Berk Kovos - CEO / Founder - SynthBits - LinkedIn
In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 °C. We measure an ensemble optical hole linewidth of 31 MHz, an order of...
Tags:
Quantum Control Solution Engineer
Education:UOML
Quantum Machines
ResearchGate
https://www.researchgate.net/publication/343259083...
The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser …
Jul 1, 2020 · We developed a new backside contact formation process for SiC power devices based on pulsed laser annealing providing an ohmic contact with lower contact resistance and …
Tags:
Laser Annealing
Ohmic contact
Sic Laser
stlouislaser.net
https://stlouislaser.net/custom-metal-laser-cutting
Custom Sheet Metal Laser Cutting Services St. Louis, Missouri
The services are uncommon and practical. St. Louis laser provide you the wide variety of laser cutting services like custom sheet metal laser cutting in Missouri.
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Laser cutting
St. Louis

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