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- Studies of 4h sic ni layer
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under ...
Feb 15, 2021 · We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An …
In this work, going further and clarifying in more detail the formation of Ni-based ohmic contact to 4H-n-SiC, we have investigated the influence of the layer sequence, thickness, and …
(PDF) Ni-Silicide Ohmic Contacts on 4H-SiC Formed …
Jun 6, 2023 · A textured interface is observed between 4H-SiC substrate and Ni silicide. Graphene "onion-like" C-clusters are included in silicide layer.
Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate
Dec 5, 2019 · In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H- n -SiC was investigated by evaluating the electrical and microstructural properties in the contact …
Formation of Ni-Silicide at the Interface of Ni/4H-SiC
Mar 24, 2011 · Scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), micro-Raman spectroscopy and X-ray diffraction (XRD) techniques were employed to study the …
A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
Mar 3, 2017 · A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is …
School of Information and Communication Technology, KTH Royal Institute of Technology, Kista SE-164 40, Sweden. A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic …
Ni/4H-SiC interaction and silicide formation under …
Nov 1, 2019 · Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and reaction of the involved atomic species. With this intent, the...
Manufacturability and reliability optimization for metallization of …
Jun 4, 2021 · In this paper, we adopt Ni-based ohmic contacts of n-type 4H-SiC (silicon carbide), basing its applications on SiC pressure sensors, to explore the manufacturability and high …
Improved Ni Ohmic Contact on n-Type 4H-SiC. C.HALLIN,* R. YAKIMOVA,* B. P]~CZ, tA. GEORGIEVA,* TS. MARINOVA, ^ L. KASAMAKOVA,- R. KAKANAKOV,- and E. JANZt~N*. …
A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
Mar 3, 2017 · A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process.
Role of carbon in the formation of ohmic contact in Ni/4H SiC and …
Jul 1, 2012 · This work focuses on the role of carbon in the annealed Ni and Ni/Ti contacts on n-type 4H SiC, by using Raman spectroscopy (RS), X-ray diffraction (XRD) and Auger electron …
Advances in High-Resolution Radiation Detection Using 4H-SiC …
Feb 28, 2020 · It was observed that Ni on 4H-SiC epitaxial layer formed a typical Schottky junction. Unlike the n-SI50 samples, no step like features were noticed in the reverse bias …
Ni-based ohmic contact on 4H-SiC is laser annealing (LA), a viable alternative to Rapid Thermal.
Effect of annealing temperature on the contact properties of …
Apr 22, 2014 · In this paper, Ni/V bilayer was deposited on n-type 4H-SiC substrate. We investigated the effect of annealing temperature on the electrical performance and …
The formation of low resistivity ohmic contacts to p-type 4H-SiC is achieved. Transfer Length Method (TLM) based-structures were fabricated on 0.8 µm-thick epitaxial p- type Silicon …
Thermal stability study of Ni–Si silicide films on Ni/4H-SiC contact …
Jun 24, 2019 · In this study, Ni thin films were deposited on 4H-SiC substrates for application in MOSFET devices with high temperature stability. A Ni–Si silicide film was then formed by a …
Improved Ni ohmic contact on n-type 4H-SiC - Springer
This paper presents the structural, chemical and electronic properties of Al/Ni/ Al-layers evaporated on 4H silicon carbide and then annealed at 1000°C for 5 min.
Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC ...
Sep 18, 2020 · We report the fabrication of high-resolution and low leakage current Schottky barrier alpha particle detectors with a large active area of 11 mm 2 on 50 μ m thick n-type 4H …
Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H …
Jul 1, 2019 · The micro-structural analysis of Ti/Ni bilayer as Ohmic contacts to n-type 4H-SiC is reported. There was no carbon segregation at the interface between the NiSi layer and the 4H …
Characterization of 4H-SiC Low Gain Avalanche Detectors …
4 days ago · Abstract. 4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an …
Interface failure behavior and mechanisms of 4H-SiC wafer with …
Jun 30, 2024 · As shown in Fig. 2b, the 4H-SiC wafer is composed of epitaxial layer, 4H-SiC, and alloy backside layer (upper adhesion layer Ti, transition layer Ni, and lower adhesion layer …
Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
Aug 22, 2024 · 4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an …
Ti/Ni bilayer Ohmic contact on 4H-SiC - ResearchGate
Jul 1, 2008 · Electric contact properties and interface structures of titanium/nickel (Ti/Ni) bilayer Ohmic contact and the aluminum (Al) overlay on 4H silicon carbide (4H-SiC) were investigated.
Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions
Aug 22, 2024 · Abstract and Figures. In this work we have studied hydrogen etching of Silicon Carbide (SiC) chips at high temperatures and in confined limited regions, to elucidate and …
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