4h sic ni layer - Search
  1. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S2589152919303242

    Ni/4H-SiC interaction and silicide formation under excimer laser ...

    • The formation of a Ni-based ohmic contact on 4H-SiC has been activated by laser annealing using UV irradiation from a 308 nm wavelength excimer laser with pulse duration of 160 ns. Morphological and … See more

    Overview

    Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength … See more

    ScienceDirect
    1. Introduction

    Silicon carbide (SiC) is today one of the most suitable materials for the fabrication of low ON-resistance (RON) power devices [1]. In this respect, the contribution of the substrate t… See more

    ScienceDirect
    2. Experimental setup

    SBD devices have been fabricated on 150 mm-diameter (6 inches) 4H-SiC wafers following the procedure given in [3]. The backside contact has been made on highly doped n-ty… See more

    ScienceDirect
    3. Results and discussion

    The sheet resistance of the as deposited Ni layer and of laser annealed samples as a function of the energy density has been measured by a Four Point Probe (FPP). This param… See more

    ScienceDirect
    Acknowledgments

    The authors would like to thank M. Fabiano and M. Arena of CTM Physics Lab (STMicroelectronics, Catania) for SEM analyses, M. Barbagallo, M. Sciacca, E. Marcellino, … See more

    ScienceDirect
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  2. Studies of 4h sic ni layer
    ScienceDirect
    Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
    We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A multimethod approach
    Published: 2021/02/15
    Cited By: 0
    Keywords: XRD; TEM…
    ResearchGate
    Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
    The formation of ohmic contacts by laser annealing approach is of great importance for SiC power devices, since it allows their fabrication on thin substrates, that is of crucial significance to reduce power dissipation. Ni silicide reaction under
    Author: Paolo Badalà, …
    Published: 2023/06/06
    DOI: 10.4028/p-z365f5
    ResearchGate
    Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
    Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and reaction of the involved atomic species. With this intent, the deposited nickel layer thickness was scaled from 100 nm to 10
    Author: Paolo Badalà, …
    Published: 2019/11/01
    DOI: 10.1016/j.mtla.201…
    ResearchGate
    A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
    A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed
    Published: 2017/03/03
    DOI: 10.1149/2.004170…
    ScienceDirect
    Role of carbon in the formation of ohmic contact in Ni/4HSiC and Ni/Ti/4HSiC
    In this work, we focus on the role of carbon in the Ni and Ni/Ti contacts on n-type 4HSiC. The contacts, formed on the backside of the wafers C-face by electron gun evaporation and annealed at 950 °C, were studied by Raman spectroscopy (RS), X-ray diffraction
    Published: 2012/07/01
    Cited By: 0
    Keywords: 4HSiC; Oh…
    National Center for Biotechnology Information
    Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
    Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina
    Author: Krishna C. Ma…
    Published: 2020/03
    Publication: Micromac…
    ResearchGate
    Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers
    The micro-structural analysis of Ti/Ni bilayer as Ohmic contacts to n-type 4H-SiC is reported. There was no carbon segregation at the interface between the NiSi layer and the 4H-SiC layer for Ti/Ni contacts, unlike pure Ni contacts. The diffraction
    Author: Vinoth Kumar …
    Published: 2019/07/01
    DOI: 10.4028/www.scie…
    ResearchGate
    Ti/Ni bilayer Ohmic contact on 4H-SiC
    Electric contact properties and interface structures of titanium/nickel (Ti/Ni) bilayer Ohmic contact and the aluminum (Al) overlay on 4H silicon carbide (4H-SiC) were investigated. The Al overlay was used for wiring and bonding pads to pass high currents,
    Published: 2008/07/01
    DOI: 10.1116/1.2949116
     
  3. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S0169433220329755

    Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under ...

     
  4. Wiley Online Library
    https://onlinelibrary.wiley.com/doi/epdf/10.1155/2016/9273702
    [PDF]

    Ni‐Based Ohmic Contacts to n‐Type 4H‐SiC: The Formation …

  5. ResearchGate
    https://www.researchgate.net/publication/…

    (PDF) Ni-Silicide Ohmic Contacts on 4H-SiC Formed …

    Jun 6, 2023 · A textured interface is observed between 4H-SiC substrate and Ni silicide. Graphene "onion-like" C-clusters are included in silicide layer.

  6. Wiley Online Library
    https://onlinelibrary.wiley.com/doi/10.1155/2019/5231983

    Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate

  7. IOPscience
    https://iopscience.iop.org/article/10.1149/1.3567531

    Formation of Ni-Silicide at the Interface of Ni/4H-SiC

  8. IOPscience
    https://iopscience.iop.org/article/10.1149/2.0041705jss

    A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

  9. IOPscience
    https://iopscience.iop.org/article/10.1149/2.0041705jss/pdf
    [PDF]

    A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H …

  10. ResearchGate
    https://www.researchgate.net/publication/…

    Ni/4H-SiC interaction and silicide formation under …

    Nov 1, 2019 · Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and reaction of the involved atomic species. With this intent, the...

  11. Springer
    https://link.springer.com/article/10.1007/s10854-021-06297-4

    Manufacturability and reliability optimization for metallization of …

  12. Springer
    https://link.springer.com/content/pdf/10.1007/s11664-997-0136-2.pdf
    [PDF]

    Improved Ni ohmic contact on n-type 4H-SiC - Springer

  13. ResearchGate
    https://www.researchgate.net/publication/314229586...

    A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

  14. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S0169433212005478

    Role of carbon in the formation of ohmic contact in Ni/4H SiC and …

  15. National Center for Biotechnology Information
    https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7142523

    Advances in High-Resolution Radiation Detection Using 4H-SiC …

  16. arXiv.org
    https://arxiv.org/pdf/2011.05159
    [PDF]

    Inter-diffusion, melting and reaction interplay in Ni/4H-SiC …

  17. AIP Publishing
    https://pubs.aip.org/aip/adv/article/4/4/047125/...

    Effect of annealing temperature on the contact properties of …

  18. Archive ouverte HAL
    https://hal.science/hal-01627844/document
    [PDF]

    The role of nickel and titanium in the formation of ohmic …

  19. IOPscience
    https://iopscience.iop.org/article/10.7567/1347-4065/ab25ba

    Thermal stability study of Ni–Si silicide films on Ni/4H-SiC contact …

  20. Springer
    https://link.springer.com/article/10.1007/s11664-997-0136-2

    Improved Ni ohmic contact on n-type 4H-SiC - Springer

  21. AIP Publishing
    https://pubs.aip.org/aip/jap/article/128/11/114501/...

    Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC ...

  22. ResearchGate
    https://www.researchgate.net/publication/334562547...

    Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H …

  23. arXiv.org
    https://arxiv.org/html/2408.12744v1

    Characterization of 4H-SiC Low Gain Avalanche Detectors …

  24. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S1526612524004390

    Interface failure behavior and mechanisms of 4H-SiC wafer with …

  25. arXiv.org
    https://arxiv.org/abs/2408.12744

    Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

  26. ResearchGate
    https://www.researchgate.net/publication/249513492...

    Ti/Ni bilayer Ohmic contact on 4H-SiC - ResearchGate

  27. ResearchGate
    https://www.researchgate.net/publication/383321919...

    Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions