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  2. Studies of 4h sic traps
    ScienceDirect
    Study of oxide trapping in SiC MOSFETs by means of TCAD simulations
    SILICON CARBIDE (SiC) material has attracted substantial attention during the last few years as a promising candidate for making power devices for high-temperature operation and under harsh environments. In spite of the considerable progress in device performance, reliability may be a limiting facto...
    Published: 2019/07/01
    Cited By: 0
    Keywords: 4H-SiC; Ox…
    ScienceDirect
    Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
    Conventional deep level transient spectroscopy (DLTS) technique was used to study deep electron traps in 4H-SiC Junction Barrier Schottky (JBS) rectifiers. 4H-SiC epitaxial layers, doped with nitrogen and grown on standard n+−4H-SiC substrates were exposed to low-dose aluminum ion implantation proce...
    Published: 2014/04/01
    Cited By: 0
    Keywords: Silicon carb…
    Institution of Engineering and Technology
    Impact of interface traps/defects and self-heating on the degradation of performance of a 4H-SiC VDMOSFET
    The reliability of silicon carbide metal oxide semiconductor field-effect transistors remains a challenge in power applications and relates to the SiO2–SiC interface. The presence of unwanted interface traps/defects degrades the device performance. The impact of acceptor traps/defects on the perform...
    Author: Mustafa H. Alq…
    Published: 06 August …
    Cited By: 8
    ScienceDirect
    Characterization of the slow-state traps in 4H–SiC P-type MOS capacitor by a preconditioning technique with high positive voltage stress
    Slow-state traps, including deep-level interface traps and near interface oxide traps, can degrade the mobility and reliability of 4H–SiC MOSFETs by carrier trapping and Coulomb scattering, hence the necessity to accurately evaluate them. In this letter, slow-state traps in the 4H–SiC P-CAP are char...
    Published: 2023/03/01
    Cited By: 0
    Keywords: 4H–SiC; P …
    ScienceDirect
    Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior
    The spatial position and energy level of the effective oxide trap in SiC DMOSFET were investigated using Trap Spectroscopy by Charge Injection and Sensing (TSCIS) method. It was found that the oxygen vacancy traps at 1.7 eV above from the valence band of SiO2 make threshold voltage (Vth) shift under...
    Published: 2018/02/01
    Cited By: 0
    Keywords: SiC; Oxide …
     
  3. Springer
    https://link.springer.com/article/10.1007/s10854-023-10813-z

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power ...

     
  4. MDPI
    https://www.mdpi.com/2673-3978/3/1/11

    Majority and Minority Charge Carrier Traps in n-Type 4H-SiC

  5. Images of 4h Sic Traps

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  6. IOPscience
    https://iopscience.iop.org/article/10.35848/1882-0786/ad652a

    Investigating the mechanism of SiO2/4H-SiC interface traps …

  7. Nature
    https://www.nature.com/articles/s42005-0…

    An adapted method for analyzing 4H silicon carbide …

    WEBJan 10, 2019 — With this adapted scheme, 4H-SiC power MOSFETs, even packaged, can be meaningfully characterized, speeding up innovation …

    • Author: Martin Hauck, Johannes Lehmeyer, Gregor Pobegen, Heiko B. Weber, Michael Krieger
    • Publish Year: 2019
  8. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S1369800118317384

    Study of oxide trapping in SiC MOSFETs by means of TCAD …

  9. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S0038110114000239

    Characterization of deep electron traps in 4H-SiC Junction Barrier ...

  10. People also ask
    What are the electrically active traps in 4h-silicon carbide (4H-SiC) pin power diodes?
    The electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes are identified by deep-level transient Fourier spectroscopy (DLTFS).

    Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power

    link.springer.com
    How do electrically active defects affect n-type 4H–sic material?
    Electrically active defects introduce energy levels into the bandgap that act as traps for charge carriers. The majority charge carrier traps in n-type 4H–SiC material have been systematically investigated for many years. On the other hand, minority charge carrier traps in n-type 4H–SiC material have been much less investigated [ 6, 7, 8, 9 ].

    Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by

    mdpi.com
    Is 4H sic a good material for electronics?
    Introduction Today, 4H-SiC materials are regarded as one of the most promising types of materials for electronic devices. It has the largest bandgap among all SiC polytypes, and due to the high and isotropic mobility of charge carriers, it is preferred as a material for power electronics [ 1 ], bipolar devices [ 2 ], and quantum sensing [ 3 ].

    Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by

    mdpi.com
    How are holes In 4H-SiC captured by oxide trap?
    Holes in 4H-SiC are captured by oxide trap through strong oxide electric field assisted tunneling. 3.1. Spatial position of oxide trap

    Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs usi…

    sciencedirect.com
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  11. Institution of Engineering and Technology
    https://ietresearch.onlinelibrary.wiley.com/…

    Impact of interface traps/defects and self‐heating on …

    WEBAug 6, 2019 — The model analyses the on-set of electro-thermal stability of 4H-SiC DMOSFETs both in the triode and saturation regions and to monitor the impact of the series resistance and traps/defects on the reliable …

  12. Springer
    https://link.springer.com/article/10.1007/s00339-019-2606-9

    Temperature and SiO2/4H-SiC interface trap effects on the …

  13. IOPscience
    https://iopscience.iop.org/article/10.1143/JJAP.43.L969

    Low-Concentration Deep Traps in 4H-SiC Grown with High

  14. Springer
    https://link.springer.com/article/10.1007/s10854-024-13507-2

    A DLTS analysis of alpha particle irradiated commercial 4H-SiC …

  15. IEEE Xplore
    https://ieeexplore.ieee.org/document/9478932

    Physical Modeling of Charge Trapping in 4H-SiC DMOSFET …

  16. AIP Publishing
    https://pubs.aip.org/aip/jap/article/131/21/215702/2837004

    Detection of near-interface traps in NO annealed 4H-SiC metal …

  17. AIP Publishing
    https://pubs.aip.org/aip/apl/article/76/3/336/...

    Shallow electron traps at the 4H–SiC/SiO 2 interface - AIP …

  18. IOPscience
    https://iopscience.iop.org/article/10.7567/APEX.10.064101

    Characterization of near-interface traps at 4H-SiC metal–oxide ...

  19. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S2773012323000031

    Characterization of the slow-state traps in 4H–SiC P-type MOS …

  20. AIP Publishing
    https://pubs.aip.org/aip/jap/article/97/3/034302/471412

    Interfaces between 4H-SiC and - AIP Publishing

  21. ResearchGate
    https://www.researchgate.net/profile/V-Afanasev/...
    [PDF]

    Shallow electron traps at the 4H–SiC/SiO2 interface

  22. IEEE Xplore
    https://ieeexplore.ieee.org/document/7126935

    Transient-Current Method for Measurement of Active Near …

  23. Scientific.Net
    https://www.scientific.net/MSF.1062.288.pdf
    [PDF]

    Observation of Fast Near-Interface Traps in 4H-SiC MOS …

  24. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S0038110117307578

    Systematic analysis of oxide trap distribution of 4H-SiC …

  25. MDPI
    https://www.mdpi.com/1996-1073/12/12/2310

    Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: …

  26. Springer
    https://link.springer.com/article/10.1007/s11664-011-1741-7

    Traps in 4H-SiC Field-Effect Transistors Characterized by

  27. intechopen.com
    https://cdn.intechopen.com/pdfs/38133/InTech...
    [PDF]

    Conductance Deep-Level Transient Spectroscopic Study of …

  28. ScienceDirect
    https://www.sciencedirect.com/science/article/pii/S1369800124002567

    Dual configuration of shallow acceptor levels in 4H-SiC

  29. IEEE Xplore
    https://ieeexplore.ieee.org/document/10701483

    Over 98% Linearity 4H-SiC Ultraviolet Position Sensitive Detector