Background
The origins of flash memory can be traced back to the development of the floating-gate MOSFET (FGMOS), also known as the floating-gate … See more

Block erasure
One limitation of flash memory is that it can be erased only a block at a time. This generally sets all bits in the block to 1. Starting with a freshly erased block, any location within that block can be programmed. … See more

NOR and NAND flash differ in two important ways:
• The connections of the individual memory cells are different.
• The interface provided for reading and writing the memory is different; NOR allows See more

Flash memory stores information in an array of memory cells made from floating-gate transistors. In single-level cell (SLC) devices, each cell stores only one bit of information. Multi-level cell (MLC) devices, including triple-level cell (TLC) devices, can store more than … See more

The low-level interface to flash memory chips differs from those of other memory types such as DRAM, ROM, and EEPROM, which support bit-alterability (both zero to one … See more

Because of the particular characteristics of flash memory, it is best used with either a controller to perform wear leveling and error correction or … See more

Multiple chips are often arrayed or die stacked to achieve higher capacities for use in consumer electronic devices such as multimedia players or GPSs. The capacity scaling (increase) of flash chips used to follow Moore's law because they are manufactured … See more