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    Physical properties

    GaN is a very hard (Knoop hardness 14.21 GPa ), mechanically stable wide-bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form it resists cracking and can be deposited in … See more

    Developments

    One of the earliest syntheses of gallium nitride was at the George Herbert Jones Laboratory in 1932.
    An early synthesis of gallium nitride was by Robert Juza and Harry Hahn in 1938.
    GaN with … See more

    Applications

    GaN-based violet laser diodes are used to read Blu-ray Discs. The mixture of GaN with In (InGaN) or Al (AlGaN) with a band gap dependent on the ratio of In or Al to GaN allows the manufacture of light-emitting diodes (… See more

    Synthesis

    GaN crystals can be grown from a molten Na/Ga melt held under 100 atmospheres of pressure of N2 at 750 °C. As Ga will not react with N2 below 1000 °C, the powder must be made from something more reactive, us… See more

     
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