The contact was defined only by its specific contact resistance value, fixed at 1 × 10 −5 Ω·cm 2, that corresponded to good ohmic properties on n-type 4H-SiC.

n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of ohmic contact formation and diferent models were proposed to explain the Schottky to ohmic transition for Ni/SiC contacts.

The ohmic contact resistance of 4H-SiC samples is measured using a transmission-line-model structure. The nickel–silicon compound phase in both pulsed laser annealing (PLA) and rapid thermal annealing (RTA) samples is Ni 2 Si, which is confirmed by X-ray diffraction.

The paper investigated the influence mechanism of Ti and W on the electrical and structural properties of the Ni-based ohmic contacts to n -type 4H-SiC.

Among the different polytypes, 4H-SiC is well-established in the field of power electronics. This hexagonal polytype presents excellent thermal and electrical properties, which allows to reduce the active 4H-SiC layer to a 10 µm range.