Drift velocity in an electric field
Without any applied electric field, in a solid, electrons and holes move around randomly. … See more

Typical electron mobility at room temperature (300 K) in metals like gold, copper and silver is 30–50 cm /(V⋅s). Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around … See more

While in crystalline materials electrons can be described by wavefunctions extended over the entire solid, this is not the case in systems with appreciable structural disorder, such as See more

The charge carriers in semiconductors are electrons and holes. Their numbers are controlled by the concentrations of impurity elements, i.e. doping concentration. Thus doping concentration has great influence on carrier mobility.
While there is … See more

At low fields, the drift velocity vd is proportional to the electric field E, so mobility μ is constant. This value of μ is called the low-field mobility.
As the electric field is … See more

Recall that by definition, mobility is dependent on the drift velocity. The main factor determining drift velocity (other than effective mass) is scattering time, i.e. how long the carrier is See more

Hall mobility
Carrier mobility is most commonly measured using the Hall effect. The result of the measurement is called the "Hall mobility" (meaning … See more