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How to Accurately Determine the Ohmic Contact Properties on n …
WEBDec 13, 2023 · The contact was defined only by its specific contact resistance value, fixed at 1 × 10 −5 Ω·cm 2, that corresponded to good ohmic properties on n-type 4H-SiC. The contacts were deposited directly onto a 350 µm thick 4H-SiC substrate doped with a …
See results only from mdpi.comFabrication of Ohmic Contac…
The ohmic contact of electrode materials and processes depends on different …
Characteristics of Ni-based ohmic contacts on n-type 4H-SiC …
WEBMar 15, 2021 · This paper discusses the formation mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties and microstructural change. Under high …
WEBFor metal contacts to n-type 4H-SiC, the electron afinity ( ) and work function of the metal ( ) are the relevant quantities determining the Schottky barrier height , due to a suficiently …
- Studies of n type 4h sic contact
Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate
WEBDec 5, 2019 · In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H- n -SiC was investigated by evaluating the electrical and microstructural properties in the …
Fabrication and characterization of nickel silicide ohmic contacts …
WEBMar 1, 2008 · In this paper, we report on fabrication and characterization of nickel silicide ohmic contacts to n-type 4H-SiC. The contacts on Si-faced 4H-SiC were fabricated by …
(PDF) Ni-Based Ohmic Contacts to n-Type 4H-SiC: …
WEBJan 1, 2016 · For the n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of ohmic...
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How to Accurately Determine the Ohmic Contact …
WEBJan 3, 2024 · In the literature, the TLM patterns are fabricated onto different substrate configurations, especially directly onto the 4H-SiC wafers.
Improved adhesion and interface ohmic contact on n-type 4H-SiC ...
WEBJul 1, 2014 · The Ni/Ti/Ni multilayer ohmic contact properties on a 4H-SiC substrate and improved adhesion with the Ti/Au overlayer have been investigated. The best specific …
Characteristics of Ni-based ohmic contacts on n-type 4H-SiC …
WEBMar 1, 2021 · This work reports an electrical characterization as a function of the temperature carried out on nickel silicide (Ni2Si) Ohmic contacts, used both for n-type …
Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC
WEBOct 15, 2009 · In this work, we report on the structural characterisation of Ni and Ni/Ti bilayer contacts on n-type 4H-SiC. The redistribution of carbon, after annealing, in the …
Ohmic contact formation mechanism of Ni on n -type 4H–SiC
WEBSep 17, 2001 · n. -type 4H–SiC. Ohmic contact formation mechanism of Ni on n -type 4H–SiC is proposed by comparing the electrical properties with microstructural change. …
Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC
WEBAug 6, 2002 · Using cross-sectional transmission electron microscopy (TEM), microstructural changes in Ni contacts on n -type 4H–SiC as a function of annealing …
A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
WEBMar 3, 2017 · A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified on wafer-scale and a high uniformity …
Ohmic contact formation mechanism of Ni on n-type 4H–SiC
WEBSep 12, 2001 · Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical …
Improved ohmic contact to n-type 4H and 6H-SiC using nichrome
WEBResults are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are …
Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed …
WEBJul 16, 2023 · The ohmic contact of electrode materials and processes depends on different types and concentrations of dopant and crystal faces. Mostly, research has been …
A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
WEBMar 3, 2017 · A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The …
Ohmic contacts simultaneously formed on n-type and p-type 4H …
WEBOct 15, 2019 · The properties of 4H–SiC/Ni/Ti/Al/W metal contacts on n-type and p-type ion-implanted 4H–SiC layers are studied in this paper, with the aim of realizing …
Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC
WEBDec 1, 2005 · In this study, investigation on Au/Ti/Al ohmic contact to n-type 4H–SiC and its thermal stability are reported. Specific contact resistances (SCRs) in the range of 10 −4 …
Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts …
WEBDec 7, 2021 · To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type …
A DLTS analysis of alpha particle irradiated commercial 4H-SiC …
WEBSep 25, 2024 · 4H-SiC Schottky barrier diodes (SBDs) were exposed to 5.4 MeV alpha particles with fluences of 2.55× 1011 cm−2, 5.11 × 1011 cm−2 and 7.67 × 1011 cm−2, …
Failure Mechanism of Ti/TiN/Pt Ohmic Contacts to n-type 4H-SiC …
WEBIn this paper, the failure mechanism of Ti/TiN/Pt ohmic contacts to n-type 4H-SiC applied to capacitive pressure sensors at high temperature in air is studied from three aspects: …
Investigation of Ni/Al/Ti Ohmic Contact on N-Type 4H-SiC
WEBSep 6, 2021 · In order to understand the contribution of various metals in the formation of ohmic contacts, Ni/Al/Ti ohmic contacts on n-type 4H-SiC in terms of a different …
Low Temperature Ohmic Contact Formation of Ni2Si on N-type …
WEBNickel Silicide (Ni2Si) is investigated as possible ohmic contact to heavily nitrogen-doped N-type 4H-SiC and 6H-SiC. Nickel Silicide was deposited via electron gun with various …
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