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Characteristics of Ni-based ohmic contacts on n-type 4H-SiC …
Mar 15, 2021 — Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties and microstructural change. Under high-temperature annealing, the phase of nickel-silicon …
How to Accurately Determine the Ohmic Contact Properties on n …
Dec 13, 2023 — Silicon carbide (SiC) is a wide bandgap semiconductor, able to work under a high temperature and high power. Among the different polytypes, 4H-SiC is well-established in the …
Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate
Dec 5, 2019 — In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H- n -SiC was investigated by evaluating the electrical and microstructural properties in the contact …
- Studies of n type 4h sic oc
Characteristics of Ni-based ohmic contacts on n-type 4H-SiC …
Mar 1, 2021 — This work reports an electrical characterization as a function of the temperature carried out on nickel silicide (Ni2Si) Ohmic contacts, used both for n-type and p-type …
n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of …
Ohmic contact formation mechanism of Ni on n-type 4H–SiC
Sep 17, 2001 — The properties of 4H–SiC/Ni/Ti/Al/W metal contacts on n-type and p-type ion-implanted 4H–SiC layers are studied in this paper, with the aim of realizing simultaneous …
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With the development of a wide variety of 4H-SiC semiconductor devices, low resistance, reproducible and stable ohmic contacts to the semiconducting material are of great need. …
Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties and …
Microstructural interpretation of Ni ohmic contact on n-type …
Aug 6, 2002 — Using cross-sectional transmission electron microscopy (TEM), microstructural changes in Ni contacts on n -type 4H–SiC as a function of annealing temperature were …
Ohmic contact formation mechanism of Ni on n -type 4H–SiC
Sep 17, 2001 — Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the electrical properties with microstructural change. The ohmic behavior was …
Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC
Oct 15, 2009 — In this work, we report on the structural characterisation of Ni and Ni/Ti bilayer contacts on n-type 4H-SiC. The redistribution of carbon, after annealing, in the Ni/SiC and the …
Characterization of Electrical Properties of n-Type 4H-SiC Single ...
Jun 15, 2013 — The electrical properties of 4H-SiC crystals were investigated by Raman spectroscopy. It was found that CDF model can be used to characterize qualitatively carrier …
Ohmic contacts simultaneously formed on n-type and p-type 4H …
Oct 15, 2019 — The properties of 4H–SiC/Ni/Ti/Al/W metal contacts on n-type and p-type ion-implanted 4H–SiC layers are studied in this paper, with the aim of realizing simultaneous …
Low resistivity ohmic titanium carbide contacts to n- and p-type …
Jul 1, 2000 — In this report, we investigated low resistivity Ohmic contacts of epitaxially grown TiC using co-evaporation to highly doped n- and p-type 4H-SiC with and without post-annealing.
Current-Voltage Characteristics and Charge-Carrier Traps in N …
In this work we examine current-capacitance-voltage-temperature properties of Ti on 4H-SiC SBDs and develop fitting algorithms to extract diode parameters based on inhomogeneous …
A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
Mar 3, 2017 — A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process.
Research progress of large size SiC single crystal materials and ...
Jan 24, 2023 — Raman spectroscopy mapping test showed that p-type SiC was entirely 4H-SiC and no others polytype. The FWHM of (0004) X-ray rocking curve was <30 arcsec, implying …
A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
Mar 3, 2017 — A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified on wafer-scale and a high uniformity for the …
Standard Industrial Classification (SIC) System Search
Standard Industrial Classification (SIC) System Search. This page allows the user to search the 1987 version SIC manual by keyword, to access descriptive information for a specified 2,3,4 …
SIC Code Lookup | SIC Code Search Tool
For SIC code lookup by company name and to find a company's SIC Code you can use our search function on top of every page and search for a business. Alternatively a search for that …
(PDF) Temperature Dependent Electrical Properties of N-Type …
May 26, 2023 — High-quality, low resistivity n-type (nitrogen-doped) single crystal 4H-SiC wafers are needed to grow high-quality epitaxial SiC layers used for the active blocking layers of high …
Jun 15, 2011 — Model SC-2004-OC Sequential Circulator is a gradient, sequential, pneumatic compression device, intended for the primary or adjunctive treatment of primary or secondary …
4-H | MU Extension
4-H brings young people, ages 5 to 18, and adults together to learn everyday skills through hands-on learning. Working on activities from animal and plant sciences to robotics, 4-H’ers learn …
The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
Aug 23, 2024 — The First Optimisation of a 16 kV 4H-SiC N-Type IGCT Q inze Cao 1,a* , P eter M. Gammon 1,b , Arne B en jamin Renz 1 ,c , M arina Antoniou 1 ,d , P hil A. Mawby 1 ,e and …
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