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- Studies of n type 4hsic ohmic
How to Accurately Determine the Ohmic Contact Properties on n …
WEBDec 13, 2023 · The contact was defined only by its specific contact resistance value, fixed at 1 × 10 −5 Ω·cm 2, that corresponded to good ohmic properties on n-type 4H-SiC.
WEBn-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the …
Characteristics of Ni-based ohmic contacts on n-type 4H-SiC …
WEBMar 15, 2021 · The ohmic contact resistance of 4H-SiC samples is measured using a transmission-line-model structure. The nickel–silicon compound phase in both pulsed …
(PDF) Ni-Based Ohmic Contacts to n-Type 4H-SiC: …
WEBJan 1, 2016 · For the n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of ohmic...
Study on simultaneous formation of ohmic contacts on p- and n
WEBIn this study, Ni/Ti/Al ohmic contacts to p- and n-type 4H-SiC with different Ni thicknesses in different annealing conditions were fabricated and characterized, and the Ni (80 …
Ohmic contacts simultaneously formed on n-type and p-type 4H …
WEBOct 15, 2019 · The properties of 4H–SiC/Ni/Ti/Al/W metal contacts on n-type and p-type ion-implanted 4H–SiC layers are studied in this paper, with the aim of realizing simultaneous …
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Role of Ti and W in the Ni-based ohmic contacts to n-type 4H-SiC
WEBJul 15, 2023 · The paper investigated the influence mechanism of Ti and W on the electrical and structural properties of the Ni-based ohmic contacts to n -type 4H-SiC.
Ni/W/Ni ohmic contacts for both n- and p-type 4H-SiC
WEBJul 25, 2018 · We proposed and fabricated ohmic contact structure for 4H-SiC using Ni/Ti/Ni to provide low-resistive ohmic contacts with good thermal stability for both n …
Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC
WEBOct 15, 2009 · In this work, we report on the structural characterisation of Ni and Ni/Ti bilayer contacts on n-type 4H-SiC. The redistribution of carbon, after annealing, in the …
Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From …
WEBJan 4, 2018 · Ohmic contacts to n-type 4H-SiC using Ni layer and W/Ni bilayer were investigated and compared. The phase composition, electronic states, and carbon …
WEBThe samples were 4H-SiC, 0.2 pm thick n-type (doping 1 “ 10~gcm -3) epitaxial layer grown on n-type (doping 6-7 “ 10 TM cm -3) off-axis =3.5 ~ toward <11 50> Si-face substrates. …
Characteristics of Ni-based ohmic contacts on n-type 4H-SiC …
WEBMar 1, 2021 · This work reports an electrical characterization as a function of the temperature carried out on nickel silicide (Ni2Si) Ohmic contacts, used both for n-type …
Improved adhesion and interface ohmic contact on n-type 4H-SiC ...
WEBJul 1, 2014 · The Ni/Ti/Ni multilayer ohmic contact properties on a 4H-SiC substrate and improved adhesion with the Ti/Au overlayer have been investigated. The best specific …
Ohmic contact formation mechanism of Ni on n-type 4H–SiC
WEBSep 12, 2001 · Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures. The formation of Ohmic contacts to n-type 4H-SiC layers at low …
500 °C high-temperature reliability of Ni/Nb ohmic contact on n …
WEBFeb 18, 2022 · The reliability of Ni/Nb ohmic contact on n-type 4H-SiC at 500 °C was investigated. The current–voltage characteristics showed that, while the …
Improved Ni ohmic contact on n-type 4H-SiC - Springer
WEBThis paper presents the structural, chemical and electronic properties of Al/Ni/ Al-layers evaporated on 4H silicon carbide and then annealed at 1000°C for 5 min. The structure …
Failure Mechanism of Ti/TiN/Pt Ohmic Contacts to n-type 4H-SiC …
WEBIn this paper, the failure mechanism of Ti/TiN/Pt ohmic contacts to n-type 4H-SiC applied to capacitive pressure sensors at high temperature in air is studied from three aspects: …
Simultaneous formation of p- and n-type ohmic contacts to 4H
WEBFabrication procedures for silicon carbide power metal oxide semiconductor field effect transistors (MOSFETs) can be improved through simultaneous formation (i.e., same …
Ohmic contact on n- and p-type ion-implanted 4H-SiC with low ...
WEBMar 21, 2017 · The ohmic contact on n- and p-type SiC regions with the same contact metal is a key process in regard to creating high-performance MOSFETs and insulated gate bipolar transistors (IGBTs).
Nickel ohmic contacts to p- and n-type 4H-SiC
WEBAug 16, 2001 · The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and …
Improved ohmic contact on n-type 4H-SiC - ScienceDirect
WEBOct 1, 2000 · In this work, we report on the structural characterisation of Ni and Ni/Ti bilayer contacts on n-type 4H-SiC. The redistribution of carbon, after annealing, in the Ni/SiC …
NiSi2 Ohmic Contact to n-Type 4H-SiC | Semantic Scholar
WEBApr 1, 2002 · Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation. The characteristics of Ni, Monel (Ni-Cu alloy, Ni55mol%-Cu45mol%), Monel/Si, Ni/Ti/Ni and Mo electrodes were studied for ohmic contact to C-face N-type 4H-SiC. Low contact resistivity (ρC) was not….
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