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- Studies of 4h sic ni layer
Controlled Spalling of 4H Silicon Carbide with Investigated Spin ...
Oct 29, 2024 · We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC’s …
Ni/4H-SiC interaction and silicide formation under excimer laser ...
Mar 1, 2020 · The formation of a Ni-based ohmic contact on 4H-SiC has been activated by laser annealing using UV irradiation from a 308 nm wavelength excimer laser with pulse duration of …
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under ...
Feb 15, 2021 · In this framework, the formation of Ni-based contacts on 4H-SiC is studied by applying 1-shot excimer laser irradiation with pulse duration 160 ns at a wavelength of λ = 308 …
(PDF) Ni-Silicide Ohmic Contacts on 4H-SiC Formed …
Jun 6, 2023 · Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties and microstructural...
Silicon carbide (SiC), particularly the 4H polytype (4H-SiC), is one of the key candidates for application in such devices, owing to its excellent intrinsic properties, which involve a large …
Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate
Dec 5, 2019 · In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H- n -SiC was investigated by evaluating the electrical and microstructural properties in the contact …
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A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to …
Thermal stability study of Ni–Si silicide films on Ni/4H-SiC contact …
Jun 24, 2019 · In this study, Ni thin films were deposited on 4H-SiC substrates for application in MOSFET devices with high temperature stability. A Ni–Si silicide film was then formed by a …
Ni/4H-SiC interaction and silicide formation under …
Nov 1, 2019 · Nickel silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and reaction of the involved atomic species. With this intent, the...
A strong relationship between structural properties of reacted layers and electrical behavior of SBDs devices has been revealed. Solid-state laser annealing process, with wavelength in …
Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC
Oct 15, 2009 · In this work, we report on the structural characterisation of Ni and Ni/Ti bilayer contacts on n-type 4H-SiC. The redistribution of carbon, after annealing, in the Ni/SiC and the …
Characteristics of Ni-based ohmic contacts on n-type 4H-SiC …
Mar 15, 2021 · Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties …
In this article we present the results of Al/Ti/Ni-based low resistive ohmic contacts to p+-type epilayers of 4H-SiC. We selected Ni as the key contact element. Ni was reported to react at …
Ti/Ni bilayer Ohmic contact on 4H-SiC - ResearchGate
Jul 1, 2008 · Electric contact properties and interface structures of titanium/nickel (Ti/Ni) bilayer Ohmic contact and the aluminum (Al) overlay on 4H silicon carbide (4H-SiC) were investigated.
Advances in High-Resolution Radiation Detection Using 4H-SiC …
Feb 28, 2020 · The SI 4H-SiC layers (SI-M50) showed a very low capacitance of ≈2 pF which hardly varied with applied bias, confirming its semi-insulating (SI) nature. The n-type epitaxial …
Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC
Dec 1, 2021 · In this paper, the influence of different Si layer thickness and annealing temperature on Al/Si/Ni/SiC ohmic contact is studied. When the thickness of Si layer is 10, 20 and 40 nm, …
Performance-Improved Vertical Ni/SiO₂/4H-SiC …
Apr 18, 2022 · Performance-Improved Vertical Ni/SiO₂/4H-SiC Metal–Oxide–Semiconductor Capacitors for High-Resolution Radiation Detection Abstract: We report the fabrication of …
A comparative study of Schottky barrier heights and charge …
6 days ago · Interface states and oxide layers lead to deviations from ideal behavior, which must be considered when designing devices for high-efficiency applications. ... Vivona et al. 35 …
Radiation Detection Using n-Type 4H-SiC Epitaxial Layer
Aug 6, 2021 · SBDs with very high average surface barrier heights (SBH) and diode ideality factors close to unity for large-area detectors can be readily fabricated on n-type 4H-SiC …
Enhancing the radiation hardness of vertical 4H–SiC detectors by …
Oct 1, 2024 · The traditional 4H–SiC radiation detectors are in the forms of a vertical metal-semiconductor (MS) structure with a Schottky barrier and a p-i-n structure achieved by …
A novel Ni/Y2O3/4H-SiC heteroepitaxial metal–oxide ... - Springer
Feb 14, 2023 · In this article, a novel Ni/Y 2 O 3 /4H-SiC vertical heteroepitaxial MOS device with excellent hole transport property and extremely high charge collection efficiency has been …
Research of A 4H-SiC MOSFET with Thick Oxide Layer and Split …
With the rapid development of SiC power semiconductor devices, SiC MOSFETs with fast switching speeds have been widely used and investigated because of their excellent electrical …
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