The MOSFET was invented at Bell Labs between 1955 and 1960. It was a breakthrough in power electronics. Generations of MOSFETs enabled power designers to achieve … See more

Because of their unipolar nature, the power MOSFET can switch at very high speed. Indeed, there is no need to remove minority carriers as with bipolar devices. The only intrinsic … See more

The equivalent circuit for a power MOSFET consists of one MOSFET in parallel with a parasitic BJT. If the BJT turns ON, it cannot be turned off, since the gate has no control over it. This phenomenon is known as "latch-up", which can lead to … See more

The power MOSFET is the most widely used power semiconductor device in the world. As of 2010 , the power MOSFET accounts for 53% of the See more

Several structures had been explored in the 1970s, when the first commercial power MOSFETs were introduced. However, most of … See more

Gate oxide breakdown
The gate oxide is very thin (100 nm or less), so it can only sustain a limited voltage. In the datasheets, manufacturers often state a … See more

Layout
Cellular structure
As described above, the current handling capability of a power MOSFET is determined by its … See more