process of making silicon wafers - Search
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    | Schematic and photos illustrating the wafer-scale hBN transfer processes. a, Asgrown 2-inch hBN film on a Cu (111)/sapphire wafer. b, Electrochemical delamination in an aqueous solution of NaOH (1M) as the electrolyte, using the Cu layer in the TRT/PMMA/hBN/Cu (111)/sapphire stack as the cathode and a Platinum foil as the anode with an applied dc voltage of 4 V. During this process, the TRT/PMMA/hBN stacked film was detached from the Cu (111)/sapphire through the generations of hydrogen bubbles at the hBN/Cu interfaces. c, Two-inch monolayer hBN film transferred onto a four-inch SiO2/Si wafer.
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    The process of making silicon wafers involves several steps:
    1. Purification and making an ingot: This involves melting the silicon, adding the seed crystal, growing the crystal by rotating it in the crucible, pulling the crystal from the crucible, and extracting the fully formed crystal with a residue of melted silicon.
    2. Lithography: This involves using a patterned mask to transfer a specific pattern onto the surface of the wafer.
    3. Doping: Silicon wafers are typically doped with other elements, such as boron or phosphorus, to create the desired electrical properties.
    4. Etching: This involves using a chemical or physical process to selectively remove material from the surface of the wafer.
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