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Dec 13, 2023 · The contact was defined only by its specific contact resistance value, fixed at 1 × 10 −5 Ω·cm 2, that corresponded to good ohmic properties on n-type 4H-SiC.
Oct 15, 2019 · The properties of 4H–SiC/Ni/Ti/Al/W metal contacts on n-type and p-type ion-implanted 4H–SiC layers are studied in this paper, with the aim of realizing simultaneous …
- Author: Yanjing He, Hongliang Lv, Xiaoyan Tang, Qingwen Song, Yimeng Zhang, Chao Han, Tao Guo, Xiaoning He, ...
- Publish Year: 2019
In this study, Ni/Ti/Al ohmic contacts to p- and n-type 4H-SiC with different Ni thicknesses in different annealing conditions were fabricated and characterized, and the Ni (80 nm)/Ti (30 …
promise to form a good ohmic contact on 4H-SiC because it led to the lowest SCR and to a good contact morphology (before nickel demonstrated superior electrical performances and became …
n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of …
Jan 1, 2016 · For the n-type SiC, Ni-based metallization is most commonly used for Schottky and ohmic contacts. Many experimental studies have been performed in order to understand the mechanism of ohmic...
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Fabrication procedures for silicon carbide power metal oxide semiconductor field effect transistors (MOSFETs) can be improved through simultaneous formation (i.e., same contact materials …
Jul 25, 2018 · We proposed and fabricated ohmic contact structure for 4H-SiC using Ni/Ti/Ni to provide low-resistive ohmic contacts with good thermal stability for both n-type and p-type …
Mar 1, 2021 · This work reports an electrical characterization as a function of the temperature carried out on nickel silicide (Ni2Si) Ohmic contacts, used both for n-type and p-type …
Oct 15, 2009 · In this work, we report on the structural characterisation of Ni and Ni/Ti bilayer contacts on n-type 4H-SiC. The redistribution of carbon, after annealing, in the Ni/SiC and the …
Characteristics of Ni-based ohmic contacts on n-type 4H-SiC …
Mar 15, 2021 · The ohmic contact resistance of 4H-SiC samples is measured using a transmission-line-model structure. The nickel–silicon compound phase in both pulsed laser …
Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From …
Jan 4, 2018 · Ohmic contacts to n-type 4H-SiC using Ni layer and W/Ni bilayer were investigated and compared. The phase composition, electronic states, and carbon structural evolution of …
Improved adhesion and interface ohmic contact on n-type 4H-SiC ...
Jul 1, 2014 · The Ni/Ti/Ni multilayer ohmic contact properties on a 4H-SiC substrate and improved adhesion with the Ti/Au overlayer have been investigated. The best specific contact resistivity …
Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts …
Dec 7, 2021 · To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type 4H-SiC …
How to accurately determine the ohmic contact properties on n …
Jan 5, 2024 · How to accurately determine the ohmic contact properties on n-type 4h-sic. 05/01/2024. HIGHLIGHTS. What: The authors propose by the means of simulations to …
Role of Ti and W in the Ni-based ohmic contacts to n-type 4H-SiC
Jul 15, 2023 · The paper investigated the influence mechanism of Ti and W on the electrical and structural properties of the Ni-based ohmic contacts to n -type 4H-SiC.
Ohmic contact on n- and p-type ion-implanted 4H-SiC with low ...
Mar 21, 2017 · The ohmic contact on n- and p-type SiC regions with the same contact metal is a key process in regard to creating high-performance MOSFETs and insulated gate bipolar …
Failure Mechanism of Ti/TiN/Pt Ohmic Contacts to n-type 4H-SiC …
Abstract: In this paper, the failure mechanism of Ti/TiN/Pt ohmic contacts to n-type 4H-SiC applied to capacitive pressure sensors at high temperature in air is studied from three aspects: …
Improved Ni ohmic contact on n-type 4H-SiC - Springer
This paper presents the structural, chemical and electronic properties of Al/Ni/ Al-layers evaporated on 4H silicon carbide and then annealed at 1000°C for 5 min. The structure was …
Nickel ohmic contacts to p and n-type 4H-SiC | Semantic Scholar
Aug 16, 2001 · The first demonstration of Ni ohmic contacts to both p/sup +/ and n/sup +/ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and …
Improved ohmic contact on n-type 4H-SiC - ScienceDirect
Oct 1, 2000 · Low resistivity ohmic contacts were fabricated on n-type 4H-SiC substrates using Ni-based metallization systems. Specific contact resistivities as low as 7×10 −5 and 4.5×10 −5 …
Nickel ohmic contacts to p- and n-type 4H-SiC
Aug 16, 2001 · Nickel ohmic contacts to p- and n-type 4H-SiC. The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation …
Micromachines | Free Full-Text | A Novel 4H-SiC SGT MOSFET …
4 days ago · A silicon carbide (SiC) SGT MOSFET featuring a “一”-shaped P+ shielding region (PSR), named SPDT-MOS, is proposed in this article. The improved PSR is introduced as a …
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