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In a semiconductor, two fundamental processes cause the movement of electrons and holes: drift and diffusion5.
Drift Current: Drift current is the movement of charge carriers (electrons and holes) in a semiconductor due to the influence of an applied electric field1. When voltage is applied to a semiconductor, electrons move towards the positive terminal of a battery, while holes (positively charged carriers) move towards the negative terminal1. This movement of charge carriers due to the applied electric field is known as drift current1.
Diffusion Current: Diffusion current, on the other hand, is the flow of charge carriers within a semiconductor from a region of higher concentration to a region of lower concentration1. This process mainly occurs when a semiconductor is doped non-uniformly1. For instance, in an N-type semiconductor, when it is doped non-uniformly, a higher concentration region can be formed at one side, and a lower concentration region can be formed at the other side1. The electrons in the higher concentration region are more in the semiconductor, so they will experience a repulsive force from each other1.
Difference between Drift and Diffusion Currents: The key difference between drift and diffusion currents lies in their causes1:
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Drift current - Wikipedia
Drift current is the electric current caused by particles getting pulled by an electric field. The term is most commonly used in the context of electrons and holes in semiconductors, although the same concept also applies to metals, electrolytes, and so on. Drift current is caused by the electric force: Charged … See more
In condensed matter physics and electrochemistry, drift current is the electric current, or movement of charge carriers, which is due to the applied electric field, often stated as the electromotive force over a given distance. … See more
In a p-n junction diode, electrons and holes are the minority charge carriers in the p-region and the n-region, respectively. In an … See more
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